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Inventi Impact: Solar

Articles

  • Inventi:esl/25456/18
    HIT Solar Cells with N-Type Low-Cost Metallurgical Si
    01-Jan-1970 Research 2018 : April - June
    Xing Yang, Jiangtao Bian, Zhengxin Liu, Shuai Li, Chao Chen, Song He

    A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156mm Ã?â?? 156mm metallurgical\nSi wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with\nregard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of\nimpurity in metallurgical Si materials is not harmful to solar cell properties.

    How to Cite this Article
    CC Compliant Citation: Xing Yang, Jiangtao Bian, Zhengxin Liu, Shuai Li, Chao Chen and Song He, â??HIT Solar Cells with N-Type Low-Cost\nMetallurgical Si,â? Advances in OptoElectronics, vol. 2018, Article ID 7368175, 5 pages, 2018, doi:10.1155/2018/7368175, https://\ncreativecommons.org/licenses/by/4.0/.
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